6 papers
200 mm Wafer-Scale Monolithic 3D Integration of Atomic Layer-Deposited Oxide Semiconductors
Chang Niu, Linjia Long, Luqi Zheng +9
Monolithic 3D (M3D) integration offers a pathway to overcome the scaling limits of conventional silicon complementary metal-oxide-semiconductor (CMOS) technology by extending dense…
Size-Dependent Band-Tail Localization in Oxide Semiconductors Revealed by Direct Density-of-States Mapping
Chang Niu, Kisoo Nam, Aravindh Shankar +5
Disorder-induced localization is expected to become increasingly important as amorphous oxide semiconductor transistors are scaled toward low-dimensional channels, yet the electron…
Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors
Chang Niu, Adam Charnas, Jian-Yu Lin +4
Ohm's law provides a fundamental framework for understanding charge transport in conductors and underpins the concept of electrical scaling that has enabled the continuous advancem…
Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
Wei Pan, D. Bruce Burckel, Catalin D. Spataru +16
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one espe…
Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium
Chang Niu, Linjia Long, Yizhi Zhang +6
The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a cruc…
Terahertz radiation driven nonlinear transport phenomena in two-dimensional tellurene
Erwin Mönch, Mariya D. Moldavskaya, Leonid E. Golub +7
Nonlinear electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's el…