FinFET and Nanowire SRAM Radiation Hardness Studies using Ab initio-TCAD Simulation Framework

Johan Saltin, Adam Elwailly, Hiu Yung Wong

In this paper, we study the vulnerability of 5nm node FinFET and nanowire (20nm gate length) and their corresponding SRAM under radiation. Ab initio tools, SRIM, PHITS, and GEANT4,…