3 papers
physics.app-ph2026
200 mm Wafer-Scale Monolithic 3D Integration of Atomic Layer-Deposited Oxide Semiconductors
Chang Niu, Linjia Long, Luqi Zheng +9
Monolithic 3D (M3D) integration offers a pathway to overcome the scaling limits of conventional silicon complementary metal-oxide-semiconductor (CMOS) technology by extending dense…
cond-mat.mes-hall2026
Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors
Chang Niu, Adam Charnas, Jian-Yu Lin +4
Ohm's law provides a fundamental framework for understanding charge transport in conductors and underpins the concept of electrical scaling that has enabled the continuous advancem…
physics.app-ph2025
Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (HZO)-based MFIM
Tae Ryong Kim, Revanth Koduru, Zehao Lin +2
Device-to-device variations in ferroelectric (FE) hafnium oxide (HfO2)-based devices pose a crucial challenge that limits the otherwise promising capabilities of this technology. A…