9 papers
200 mm Wafer-Scale Monolithic 3D Integration of Atomic Layer-Deposited Oxide Semiconductors
Chang Niu, Linjia Long, Luqi Zheng +9
Monolithic 3D (M3D) integration offers a pathway to overcome the scaling limits of conventional silicon complementary metal-oxide-semiconductor (CMOS) technology by extending dense…
Size-Dependent Band-Tail Localization in Oxide Semiconductors Revealed by Direct Density-of-States Mapping
Chang Niu, Kisoo Nam, Aravindh Shankar +5
Disorder-induced localization is expected to become increasingly important as amorphous oxide semiconductor transistors are scaled toward low-dimensional channels, yet the electron…
Terahertz field-driven nonlinear Hall effect and other second order transport phenomena in two-dimensional tellurene
M. D. Moldavskaya, L. E. Golub, E. Mönch +4
We study terahertz field-driven second-order nonlinear electron transport phenomena, including the nonlinear Hall effect (NLHE), in two-dimensional tellurene flakes. The dc current…
Surface lone-pair polarization probed by quantum-geometric transport in tellurium
Nathanael N. Batista, Wendel S. Paz, Manuel Suárez-RodrÃguez +10
Stereochemically active lone pairs are ubiquitous microscopic sources of polarity in molecules and solids, but their collective behavior in crystals is often hidden by symmetry or…
Chirality Driven Ratchet Currents in Two-Dimensional Tellurene with an Asymmetric Grating
M. D. Moldavskaya, L. E. Golub, Chang Niu +2
The emergence of the terahertz (THz) ratchet effect is a rapidly expanding field of research that utilizes broken spatial symmetry in low-dimensional materials to rectify alternati…
Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors
Chang Niu, Adam Charnas, Jian-Yu Lin +4
Ohm's law provides a fundamental framework for understanding charge transport in conductors and underpins the concept of electrical scaling that has enabled the continuous advancem…