7 citations · 7 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2022
Robust Subthermionic Topological Transistor Action via Antiferromagnetic Exchange
Sagnik Banerjee, Koustav Jana, Anirban Basak +3
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-stat…
cond-mat.mes-hall2021★ 7 cited
Momentum relaxation effects in 2D-Xene field effect device structures
Anirban Basak, Pratik Brahma, Bhaskaran Muralidharan
We analyze the electric field driven topological field effect transition on 2D-xene materials with the addition of momentum relaxation effects, in order to account for dephasing pr…