19 citations · 19 across the 2 of their papers we have counts for
2 papers
cs.AR2022
A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model
Shan Shen, Peng Cao, Ming Ling +1
Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration densi…
cs.AR2019★ 19 cited
TS Cache: A Fast Cache with Timing-speculation Mechanism Under Low Supply Voltages
Shan Shen, Tianxiang Shao, Xiaojing Shang +4
To mitigate the ever-worsening Power Wall problem, more and more applications need to expand their power supply to the wide-voltage range including the near-threshold region. Howev…