2 papers
cond-mat.mtrl-sci2022
Field free switching through bulk spin-orbit torque in L10-FePt films deposited on vicinal substrates
Yongming Luo, Yanshan Zhuang, Zhongshu Feng +9
L10-FePt distinguishes itself for its ultrahigh perpendicular magnetic anisotropy (PMA), which enables memory cells with sufficient thermal stability to scale down to 3 nm. The rec…
cond-mat.mes-hall2022
Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions
Jiuning Hu, Albert F. Rigosi, Mattias Kruskopf +13
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-ter…