activity
20222026
most citedTunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

66 citations · 93 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2026

Atom-selective spin-polarized transport in a charge-ordered altermagnet

Liu Yang, Yuan-Yuan Jiang, Xiao-Yan Guo +6

Altermagnets provide a promising platform for spin-polarized transport without net magnetization, but their transport properties are usually discussed in terms of momentum-space sp…

cond-mat.mtrl-sci2025

Interface-controlled antiferromagnetic tunnel junctions

Liu Yang, Yuan-Yuan Jiang, Xiao-Yan Guo +7

Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antifer…

physics.atom-ph2024

Ferromagnetic Traps for Quasi-Continuous Operation of Optical Nanofiber Interfaces

Ruijuan Liu, Jinggu Wu, Yuan Jiang +2

A soft ferromagnetic plate uniformizes Tesla-level fields generated by attached permanent magnets, producing a smooth and electronically tunable surface field on the opposite side.…

physics.atom-ph2024

Energy Transport Among Highly-Polarized Atoms

Catherine D. Opsahl, Yuan Jiang, Samantha A. Grubb +7

We measure the transport of energy among the internal states of ultracold rubidium Rydberg atoms coupled by dipole-dipole exchange. In a magneto-optical trap, a static electric fie…

cond-mat.mes-hall2024

Orbital Hall effect assisted field-free perpendicular magnetization switching

Zelalem Abebe Bekele, Yuan-Yuan Jiang, Kun Lei +5

Spin-orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba-Edelstein effect offer potential for magnetization manipulation. However, determin…

cond-mat.mtrl-sci2023★ 66 cited

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Kartik Samanta, Yuan-Yuan Jiang, Tula R. Paudel +2

Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes sepa…

cond-mat.mtrl-sci2023★ 22 cited

X-type stacking in cross-chain antiferromagnets

Shui-Sen Zhang, Zi-An Wang, Bo Li +11

Physical phenomena in condensed matter normally arise from the collective effect of all atoms, while selectively addressing a lone atomic sublattice by external stimulus is elusive…

cond-mat.mtrl-sci2023★ 5 cited

Prediction of Giant Tunneling Magnetoresistance in RuO/TiO/RuO (110) Antiferromagnetic Tunnel Junctions

Yuan-Yuan Jiang, Zi-An Wang, Kartik Samanta +6

Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist…

physics.app-ph2022

Diverse surface waves supported by bianisotropic metasurfaces

Oubo You, Wenlong Gao, Yachao Liu +2

Surface waves supported by structured metallic surfaces, i.e. metasurfaces, have drawn wide attention recently. They are promising for various applications ranging from integrated…