4 citations · 4 across the 8 of their papers we have counts for
5 papers · 1 filter
ROBIN: Incremental Oblique Interleaved ECC for Reliability Improvement in STT-MRAM Caches
Elham Cheshmikhani, Hamed Farbeh, Hossein Asadi
Spin-Transfer Torque Magnetic RAM} (STT-MRAM) is a promising alternative for SRAMs in on-chip cache memories. Besides all its advantages, high error rate in STT-MRAM is a major lim…
Enhancing Reliability of STT-MRAM Caches by Eliminating Read Disturbance Accumulation
Elham Cheshmikhani, Hamed Farbeh, Hossein Asadi
Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero l…
3RSeT: Read Disturbance Rate Reduction in STT-MRAM Caches by Selective Tag Comparison
Elham Cheshmikhani, Hamed Farbeh, Hossein Asad
Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides…
TA-LRW: A Replacement Policy for Error Rate Reduction in STT-MRAM Caches
Elham Cheshmikhani, Hamed Farbeh, Seyed Ghassem Miremadi +1
As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among em…
A System-Level Framework for Analytical and Empirical Reliability Exploration of STT-MRAM Caches
Elham Cheshmikhani, Hamed Farbeh, Hossein Asadi
Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatil…