81 citations · 122 across the 6 of their papers we have counts for
6 papers
Superconductivity in boron-doped carbon nanotube networks
Jie Pan, Bing Zhang, Yuxiao Hou +5
By using the five Angstrom diameter pores of calcined zeolite as the template, we have fabricated boron doped carbon nanotube networks via the chemical vapor deposition method. Ram…
Multiferroic van der Waals heterostructure FeCl/ScCO: Nonvolatile electrically switchable electronic and spintronic properties
Liemao Cao, Xiaohui Deng, Guanghui Zhou +4
Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and t…
Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe
Kang Lai, Sailong Ju, Hongen Zhu +11
Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from…
A large enhancement of carrier mobility in phosphorene by introducing hexagonal boron nitride substrate
Jiafeng Xie, Z. Y. Zhang, D. Z. Yang +3
Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil…
Band gap modulation in γ-graphyne by p-n codoping
Xiaohui Deng, Jing Zeng, Mingsu Si +1
The modulation of band gap in the two-dimensional carbon materials is of impor- tance for their applications as electronic devices. By first-principles calculations, we propose a m…
The mechanism and process of spontaneous boron doping in graphene in the theoretical perspective
Xiaohui Deng, Jing Zeng, Mingsu Si +1
A theoretical model is presented to reveal the mechanism of B doping into graphene in the microwave plasma experiment choosing trimethylboron as the doping source (ACS NANO 6 (2012…