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20222024
most citedInvariant expansion of the 30-band k.p model and its parameters for III-V compounds

11 citations · 30 across the 6 of their papers we have counts for

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cond-mat.mtrl-sci2024

Electronic and structural properties of group IV materials and their polytypes

Jakub Ziembicki, Paweł Scharoch, Maciej P. Polak +2

Nanotechnology's impact on semiconductor industry advancement, particularly through the engineering of nanostructures like nanowires, opens new possibilities for material functiona…

cond-mat.mtrl-sci2023

Magneto-optical anisotropies of 2D antiferromagnetic MPX from first principles

Miłosz Rybak, Paulo E. Faria Junior, Tomasz Woźniak +3

Here we systematically investigate the impact of the spin direction on the electronic and optical properties of transition metal phosphorus trichalcogenides (MPX, M=Mn, Ni, Fe;…

cond-mat.mtrl-sci2023

Optical markers of magnetic phase transition in CrSBr

W. M. Linhart, M. Rybak, M. Birowska +6

Here, we investigate the role of the interlayer magnetic ordering of CrSBr in the framework of calculations and by using optical spectroscopy techniques. These…

cond-mat.mtrl-sci20229 cited

Stress-Tuned Optical Transitions in Layered 1T-MX2 (M= Hf, Zr, Sn; X= S, Se) Crystals

Miłosz Rybak, Tomasz Woźniak, Magdalena Birowska +5

Optical measurements under externally applied stresses allow us to study the materials' electronic structure by comparing the pressure evolution of optical peaks obtained from expe…

cond-mat.mtrl-sci20221 cited

Strong substrate strain effects in multilayered WS2 revealed by high-pressure optical measurements

Robert Oliva, Tomasz Woźniak, Paulo E. Faria Junior +5

The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculat…

cond-mat.mtrl-sci20229 cited

The effect of isovalent doping on the electronic band structure of group IV semiconductors

Maciej P Polak, Paweł Scharoch, Robert Kudrawiec

The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to…