activity
20222026
most citedRoom Temperature Gate Tunable Non Reciprocal Charge Transport in Lattice Matched InSb/CdTe Heterostructures

2 citations · 3 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2026

Stack of correlated insulating states in bilayer graphene kagome superlattice

Xinyu Cai, Fengfan Ren, Qiao Li +9

Graphene-based systems have emerged as a rich platform for exploring emergent quantum phenomena-including superconductivity, magnetism, and correlated insulating behavior-arising f…

cond-mat.mes-hall2025

Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures

Zhenghang Zhi, Hanzhi Ruan, Jiuming Liu +6

We report the epitaxial growth of high-quality Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb quantum well films featured by high carrier mobility and strong spin-orbit coupling. By appropriately…

physics.app-ph2025

Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface

Xiaoxiao Ma, Zhenghang Zhi, Weijie Deng +4

The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit c…

cond-mat.mtrl-sci2024

Tunable interfacial Rashba spin-orbit coupling in asymmetric AlInSb/InSb/CdTe quantum well heterostructures

Hanzhi Ruan, Zhenghang Zhi, Yuyang Wu +11

The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown AlInSb/InSb/CdTe quantum well heterostructures is reported. The effective band…

physics.app-ph2023

Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures

Jiuming Liu, Liyang Liao, Bin Rong +14

Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence o…

physics.app-ph2023★ 1 cited

Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB

Puyang Huang, Aitian Chen, Jianting Dong +9

Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative t…