Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing

Y. Wang, K. Huynh, M. E. Liao +9

Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Exten…