most citedCharacterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

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physics.app-ph2022★ 2 cited

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Bolun Zeng, Haochen Zhang, Zikun Xiang +9

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteri…