Bolun Zeng

most citedCharacterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

2 citations · 2 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2022★ 2 cited

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Bolun Zeng, Haochen Zhang, Zikun Xiang +9

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteri…

physics.app-ph2022

Design of Cryogenic Fully Differential Gain Boosting-OTA by the $g_{m} / I_{d}$ methodology used for a 14 bit Pipelined-SAR ADC

Mingjie Wen, Chao Luo, BoLun Zeng +1

Quantum computing (QC) requires cryogenic electronic circuits as control and readout sub-systems of quantum chips to meet the qubit scale-up challenges.At this temperature,MOSFETs…

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Design of Cryogenic Fully Differential Gain Boosting-OTA by the gm​/Id​ methodology used for a 14 bit Pipelined-SAR ADC

Design of Cryogenic Fully Differential Gain Boosting-OTA by the $g_{m} / I_{d}$ methodology used for a 14 bit Pipelined-SAR ADC