61 citations · 229 across the 14 of their papers we have counts for
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Origin of interface limitation in CuInS based solar cells
Mohit Sood, Jakob Bombsch, Alberto Lomuscio +8
Copper indium disulfide (CuInS) grown under Cu-rich conditions exhibits high optical quality but suffers predominantly from charge carrier interface recombination resulting in…
The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells
Evandro Martin Lanzoni, Thibaut Gallet, Conrad Spindler +4
An in-depth understanding of the electronic properties of grain boundaries (GB) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombin…
Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells
Mohit Sood, Aleksander Urbaniak, Christian Kameni Boumenou +6
The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photo…
Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment
Mohit Sood, Alberto Lomuscio, Florian Werner +6
Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level…