61 citations · 229 across the 14 of their papers we have counts for
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Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying
Aubin JC. M. Prot, Michele Melchiorre, Tilly Schaaf +10
Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 a…
Composition dependence of electronic defects in CuGaS2
Damilola Adeleye, Mohit Sood, Michele Melchiorre +2
CuGaS2 films grown by physical vapour deposition have been studied by photoluminescence (PL) spectroscopy, using excitation intensity and temperature dependent analyses. We observe…
Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases
Aubin JC. M. Prot, Michele Melchiorre, Felix Dingwell +10
Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although t…
On the origin of tail states and VOC losses in Cu(In,Ga)Se2
Omar Ramírez, Jiro Nishinaga, Felix Dingwell +5
The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage in Cu(In,Ga)Se2 sol…
How much gallium do we need for a p-type Cu(In,Ga)Se2?
Omar Ramírez, Evandro Martin Lanzoni, Ricardo G. Poeira +4
Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growt…
Metastable defects decrease the fill factor of solar cells
Thomas Paul Weiss, Omar Ramírez, Stefan Paetel +4
Cu(In,Ga)Se2 based solar cells exceed power conversion efficiencies of 23 %. Yet, the fill factor of these solar cells, with best values around 80 %, is relatively low (Si reaches…
Post-deposition annealing and interfacial ALD buffer layers of SbSe/CdS stacks for reduced interface recombination and increased open-circuit voltages
Thomas Paul Weiss, Ignacio Minguez-Bacho, Elena Zuccalà +8
Currently, SbSe thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further de…
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency
Mohit Sood, Poorani Gnanasambandan, Damilola Adeleye +4
Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leads to reduced open-circuit voltage because of a negative conduction band offset at the Cu(In,Ga)S2/CdS inte…
The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells
Evandro Martin Lanzoni, Thibaut Gallet, Conrad Spindler +4
An in-depth understanding of the electronic properties of grain boundaries (GB) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombin…
Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells
Mohit Sood, Aleksander Urbaniak, Christian Kameni Boumenou +6
The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photo…
Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment
Mohit Sood, Alberto Lomuscio, Florian Werner +6
Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level…