11 citations · 12 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2022★ 11 cited
N-polar GaN p-n junction diodes with low ideality factors
Kazuki Nomoto, Huili Grace Xing, Debdeep Jena +1
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage charac…
cond-mat.mtrl-sci2022★ 1 cited
Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning
Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei +7
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular b…