22 citations · 49 across the 6 of their papers we have counts for
7 papers
Anyons at impurities: Fractional charge measurement and "wrong sign" binding
Haydn S. Adlong, Arthur Christianen, Atac Imamoglu +1
Recent photoluminescence experiments in twisted MoTe have reported signatures of anyons binding to trapped trions. The measured binding energies near the fractional Chern insul…
Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques
Huaide Zhang, Philipp John, Jingxuan Kang +3
We present a systematic investigation of Ga adsorption and desorption kinetics on the wurtzite GaN(0001) surface using four in situ techniques operated simultaneously: reflection h…
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
YongJin Cho, Changkai Yu, Huili Grace Xing +1
This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680C by molecular beam epitaxy on a Ga-pola…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
Jashan Singhal, Jimy Encomendero, Yongjin Cho +6
N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidatio…
N-polar GaN p-n junction diodes with low ideality factors
Kazuki Nomoto, Huili Grace Xing, Debdeep Jena +1
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage charac…
Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning
Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei +7
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular b…