E. Kluth

activity

20212023

most citedIn-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

15 citations · 29 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2023★ 15 cited

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

Wenshan Chen, Kingsley Egbo, Hans Tornatzky +3

Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To exp…

cond-mat.mtrl-sci2022★ 6 cited

Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Kingsley Egbo, Esperanza Luna, Jonas Lähnemann +7

By employing a mixed SnO $_{2}$ +Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1…

cond-mat.mtrl-sci2022

Tackling Disorder in $γ$ -Ga $_{2}$ O $_{3}$

Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert +19

Ga $_{2}$ O $_{3}$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga $_{2}$ O $_{3}$ offers potential for electronic struc…

cond-mat.mtrl-sci2021★ 8 cited

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity

Alexandra Papadogianni, Charlotte Wouters, Robert Schewski +9

In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films on (111)-oriented yttria-stabilized zirconia substrates using plas…

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Tackling Disorder in γ-Ga2​O3​

Molecular beam epitaxy of single-crystalline bixbyite (In1−x​Gax​)2​O3​ films (x≤0.18): Structural properties and consequences of compositional inhomogeneity

Tackling Disorder in $γ$ -Ga $_{2}$ O $_{3}$

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity