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cond-mat.mtrl-sci2025
Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes
Richard Monflier, Richard Daubriac, Mahmoud Haned +9
For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and hi…
cond-mat.mtrl-sci2021★ 6 cited
Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing
Toshiyuki Tabata, Karim, Huet +5
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity i…