activity
20132025
most citedFerroelectricity and Rashba effect in GeTe

215 citations · 263 across the 11 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2025

Anisotropic Schottky-barrier-height in high-symmetry 2D WSe: Momentum-space anisotropy

Nuo Xu, Xiao-Lin Zhao, Meng-Xue Ren +5

It is usually supposed that only low-symmetry two-dimensional (2D) materials exhibit anisotropy, here we show that high-symmetry 2D semiconductors can show significant anisotropy i…

cond-mat.mtrl-sci2024

Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

Yu-Meng Gao, Yue-Jiao Zhang, Xiao-Lin Zhao +9

The electronic structure evolutions of few-layer black phosphorus (BP) under pressure shows a wealth of phenomena, such as the nonmonotonic change of direct gap at the Γ point, the…

cond-mat.mtrl-sci2023

Elemental topological ferroelectrics and polar metals of few-layer materials

Hu Zhang, Lulu Zhao, RuiFeng Zhang +6

Ferroelectricity can exist in elemental phases as a result of charge transfers between atoms occupying inequivalent Wyckoff positions. We investigate the emergence of ferroelectric…

cond-mat.mtrl-sci2023★ 18 cited

Momentum matching and band-alignment type in van der Waals heterostructures: Interfacial effects and materials screening

Yue-Jiao Zhang, Yin-Ti Ren, Xiao-Huan Lv +10

Momentum-matched type II van der Waals heterostructures (vdWHs) have been designed by assembling layered two-dimensional semiconductors (2DSs) with special band-structure combinati…

cond-mat.mtrl-sci2021★ 20 cited

Hole- and electron-injection driven phase transitions in transition metal dichalcogenides and beyond: A unified understanding

Xiao-Huan Lv, Meng-Qi Wu, Yin-Ti Ren +7

The phase transitions among polymorphic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention for their potential in enabling distinct fu…

cond-mat.mtrl-sci2014★ 215 cited

Ferroelectricity and Rashba effect in GeTe

C. Rinaldi, D. Di Sante, A. Giussani +9

GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors…