47 citations · 47 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2023
A vertical gate-defined double quantum dot in a strained germanium double quantum well
Hanifa Tidjani, Alberto Tosato, Alexander Ivlev +6
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited t…
cond-mat.mes-hall2021★ 47 cited
Lightly-strained germanium quantum wells with hole mobility exceeding one million
M. Lodari, O. Kong, M. Rendell +5
We demonstrate that a lightly-strained germanium channel ( = -0.41%) in an undoped Ge/SiGe heterostructure field effect transistor supports a 2D h…