3 papers
cond-mat.mtrl-sci2023
Distinguishing the importance of different charge trapping centers in CaF2-based 2D material MOSFETs
Zhe Zhao, Tao Xiong, Jian Gong +1
Crystalline CaF2 is drawing huge attentions due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be much superior than…
physics.app-ph2023
The interface states in gate-all-around transistors (GAAFETs)
Yue-Yang Liu, Haoran Lu, Zirui Wang +5
The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling do…
cond-mat.mes-hall2021
Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach
Runsheng Wang, Zixuan Sun, Yue-Yang Liu +4
In this paper, the recent advances of our studies on hot carrier degradation (HCD) are presented from trap-based approach. The microscopic speculation of interface trap generation…