Showing cond-mat.mtrl-sciShow all
2 papers · 1 filter
cond-mat.mtrl-sci2023
Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices
Linqiang Xu, Lianqiang Xu, Qiuhui Li +7
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…
cond-mat.mtrl-sci2021
Sliding Ferroelectric Tunnel Junctions
Jie Yang, Jun Zhou, Jing Lu +3
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism was reported experimentally (Science 2021, 37…