Growth of compositionally uniform ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy

Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7

500-nm-thick ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…