4 papers
Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes
Kwan-Ho Kim, Zirun Han, Yinuo Zhang +6
The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computi…
Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures
Simrjit Singh, Kwan-Ho Kim, Kiyoung Jo +9
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applicat…
Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 C
Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim +12
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 C are currently non-existent and remains a critically unmet challenge in the development o…
MoS/AlScN negative capacitance field-effect transistors
Seunguk Song, Kwan-Ho Kim, Srikrishna Chakravarthi +6
AlScN (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-bas…