11 citations · 20 across the 2 of their papers we have counts for
2 papers
physics.app-ph2025★ 11 cited
High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
Haotian Su, Yuan-Mau Lee, Tara Peña +9
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and hetero…
physics.app-ph2022★ 9 cited
Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a Thermal Barrier
Raisul Islam, Shengjun Qin, Sanchit Deshmukh +7
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of…