1.26 $\mu$m intersubband transitions in In${}_{0.3}$Ga${}_{0.7}$As/AlAs quantum wells

Cesar Pascual Garcia, Andrea De Nardis, Vittorio Pellegrini +5

We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In${}_{0.3}$Ga${}_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was use…