Kai Han

activity

20202025

most citedThermodynamic driving force of transient negative capacitance of ferroelectric capacitors

4 citations · 4 across the 3 of their papers we have counts for

collaborators

3 papers

physics.app-ph2025

Investigation of the Physical Mechanism behind Retention Loss in FeFETs with MIFIFIS Gate Structure

Tao Hu, Zeqi Chen, Runhao Han +19

A Metal-Gate Blocking Layer (GBL)- Ferroelectric-Tunnel Dielectric Layer (TDL)-Ferroelectric -Channel Insulator (Ch.IL)-Si (MIFIFIS) structure is proposed to achieve a larger MW fo…

cond-mat.mtrl-sci2024

Effect of Top Al $_{2}$ O $_{3}$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al $_{2}$ O $_{3}$ /Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{x}$ /Si (MIFIS) Gate Structure

Tao Hu, Xinpei Jia, Runhao Han +17

We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al $_{2}$ O $_{3}$ /Hf$_{0.5…

physics.app-ph2020★ 4 cited

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Yuanyuan Zhang, Xiaoqing Sun, Junshuai Chai +6

This paper investigates the thermodynamic driving force of transient negative capacitance (NC) in the series circuit of the resistor and ferroelectric capacitor (R-FEC). We find th…

Investigation of the Physical Mechanism behind Retention Loss in FeFETs with MIFIFIS Gate Structure

Effect of Top Al2​O3​ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al2​O3​/Hf0.5​Zr0.5​O2​/SiOx​/Si (MIFIS) Gate Structure

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Effect of Top Al $_{2}$ O $_{3}$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al $_{2}$ O $_{3}$ /Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{x}$ /Si (MIFIS) Gate Structure