Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

V. N. Jmerik, D. V. Nechaev, E. A. Evropeitsev +11

The paper reports on fundamental properties of the GaN/AlN quantum wells (QWs) with nominal subcritical thicknesses of 0.75-2 monolayers (MLs). They are grown by plasma-activated m…