185 citations · 188 across the 7 of their papers we have counts for
7 papers
Neural dynamical systems on ferroelectric compute-in-memory for real-time forecasting
Keshava Katti, Adithya Selvakumar, Pratik Chaudhari +1
Neural dynamical systems are expressive temporal predictors that capture continuous-time dynamics through fine-grained state updates. However, this sequential structure maps poorly…
Neuromorphic Computing for Low-Power Artificial Intelligence
Keshava Katti, Pratik Chaudhari, Deep Jariwala
Classical computing is beginning to encounter fundamental limits of energy efficiency. This presents a challenge that can no longer be solved by strategies such as increasing circu…
Analog Content-Addressable Memory from Complementary FeFETs
Xiwen Liu, Keshava Katti, Yunfei He +6
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical…
Accelerate & Actualize: Can 2D Materials Bridge the Gap Between Neuromorphic Hardware and the Human Brain?
Xiwen Liu, Keshava Katti, Deep Jariwala
Two-dimensional (2D) materials present an exciting opportunity for devices and systems beyond the von Neumann computing architecture paradigm due to their diversity of electronic s…
MammoFL: Mammographic Breast Density Estimation using Federated Learning
Ramya Muthukrishnan, Angelina Heyler, Keshava Katti +11
In this study, we automate quantitative mammographic breast density estimation with neural networks and show that this tool is a strong use case for federated learning on multi-ins…
Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu +14
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurr…
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
Xiwen Liu, Dixiong Wang, Jeffrey Zheng +5
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a…