223 citations · 296 across the 8 of their papers we have counts for
8 papers
Exploring binary intermetallics for advanced interconnect applications using ab initio simulations
Kiroubanand Sankaran, Kristof Moors, Jean-Philippe Soulié +2
The challenge of increasing copper (Cu) resistivity with diminishing Cu interconnect dimensions in complementary metal-oxide-semiconductor (CMOS) transistors, along with the impera…
Selecting Alternative Metals for Advanced Interconnects
Jean-Philippe Soulié, Kiroubanand Sankaran, Benoit Van Troeye +14
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect s…
CuAl films as Alternatives to Copper for Advanced Interconnect Metallization
Jean-Philippe Soulié, Kiroubanand Sankaran, Geoffrey Pourtois +3
CuAl thin films with have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were…
AlSc thin films for advanced interconnect applications
Jean-Philippe Soulié, Kiroubanand Sankaran, Valeria Founta +7
AlSc thin films have been studied with compositions around AlSc ( = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films w…
First-principles-based screening method for resistivity scaling of anisotropic metals
Kristof Moors, Kiroubanand Sankaran, Geoffrey Pourtois +1
The resistivity scaling of metals is a crucial limiting factor for further downscaling of interconnects in nanoelectronic devices that affects signal delay, heat production, and en…
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
Kiroubanand Sankaran, Kristof Moors, Zsolt Tőkei +2
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using…
Resistivity scaling model for metals with conduction band anisotropy
Miguel De Clercq, Kristof Moors, Kiroubanand Sankaran +5
It is generally understood that the resistivity of metal thin films scales with film thickness mainly due to grain boundary and boundary surface scattering. Recently, several exper…
Thickness dependence of the resistivity of Platinum group metal thin films
Shibesh Dutta, Kiroubanand Sankaran, Kristof Moors +6
We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknes…