72 citations · 297 across the 16 of their papers we have counts for
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Identification of carbon-related color centers in hBN by high-resolution ab initio photoluminescence modeling
Vytautas Žalandauskas, Marek Maciaszek, Marianne Etzelmüller Bathen +3
Identification of optically active defects in hexagonal boron nitride (hBN) remains challenging because different defect candidates can produce similar calculated photoluminescence…
Optical Stability and Photophysics of NV Centers in Diamond up to 120 GPa
Kin On Ho, Cassandra Dailledouze, Vytautas Žalandauskas +9
The nitrogen vacancy (NV) center has emerged as a powerful quantum sensor in high-pressure research, with the observation of optically detected magnetic resonance at megabar pressu…
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…