Low-Temperature 2D/2D Ohmic Contacts in WSe${}_2$ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition

L. J. Stanley, Hsun-Jen Chuang, Zhixian Zhou +4

We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multi-terminal WSe${}_2$ Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating t…