10 citations · 10 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026
Interface stability of beta-Ga2O3 (100) on oxidized Si- and C-terminated 3C-SiC (001) substrates: a first-principles investigation
Marica Licciardi, Aldo Ugolotti, Emilio Scalise +1
We provide a first-principles modeling of the beta-Ga2O3/3C-SiC interface that takes into account the reconstructions occurring at the 3C-SiC (001) surface by oxidation, aiming to…
hep-ph2020★ 10 cited
An asymptotically safe SU(5) GUT
M. Fabbrichesi, C. M. Nieto, A. Tonero +1
We minimally extend the Standard Model field content by adding new vector-like fermions at the TeV scale to allow gauge coupling unification at a realistic scale. We embed the mode…