Atomic Layer Deposition of Aluminum (111) Thin Film by Dimethylethylaminealane Precursor

Sameh Okasha, Yoshiaki Sekine, Satoshi Sasaki +1

We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic under…