activity
20212026
most citedThe Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission

17 citations · 32 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2026

Accurate description of the electronic states of the V center in hBN by wavefunction theory

Zsolt Benedek, Ádám Ganyecz, Oscar Bulancea-Lindvall +2

Ensembles of negatively charged boron vacancy (V) centers in hexagonal boron nitride (hBN) have emerged as a two-dimensional spin qubit system interfaced with optics…

cond-mat.mtrl-sci2025

Demonstration of the ODMR activity of the telecom range ClV center in SiC: a wavefunction theory analysis

Zsolt Benedek, Oscar Bulancea-Lindvall, Joel Davidsson +2

Recently, density functional theory-based high-throughput screening of point defects in 4H-SiC revealed the positively charged chlorine-vacancy (ClV) defect to be a promising quant…

cond-mat.mtrl-sci2025

Theoretical characterization of NV-like defects in 4H-SiC using ADAQ with the SCAN and r2SCAN meta-GGA functionals

Ghulam Abbas, Oscar Bulancea-Lindvall, Joel Davidsson +2

Kohn-Sham density functional theory (DFT) is widely used for screening color centers in semiconductors. While the Perdew-Burke-Ernzerhof (PBE) functional is efficient, it often lac…

cond-mat.mtrl-sci2024

Native defects and impurities in talcum quasi-2D layers

Gellért Dolecsek, Oscar Bulancea Lindvall, Joel Davidsson +1

Layered semiconductors have recently emerged as capable host materials for novel quantum applications ranging from phonics to sensing. Most studies have focused on artificial layer…

cond-mat.mtrl-sci2024★ 11 cited

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Oscar Bulancea-Lindvall, Joel Davidsson, Ivan G. Ivanov +4

Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown g…

cond-mat.mtrl-sci2023★ 17 cited

The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission

Oscar Bulancea-Lindvall, Joel Davidsson, Rickard Armiento +1

The diamond nitrogen vacancy (NV) center remains an ever increasing topic of interest. At present, it is considered an ideal example of a solid-state qubit applicable in quantum co…

cond-mat.mes-hall2022

Isotope purification induced reduction of spin relaxation and spin coherence times in semiconductors

Oscar Bulancea-Lindvall, Matthew Travis Eiles, Nguyen Tien Son +2

Paramagnetic defects and nuclear spins are often the major sources of decoherence and spin relaxation in solid-state qubits realized by optically addressable point defect spins in…

cond-mat.mtrl-sci2022★ 4 cited

Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide

Oscar Bulancea-Lindvall, Matthew T. Eiles, Nguyen Tien Son +2

Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has…

cond-mat.mes-hall2021

Dipolar spin relaxation of divacancy qubits in silicon carbide

Oscar Bulancea Lindvall, Nguyen Tien Son, Igor A. Abrikosov +1

Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numero…