21 citations · 21 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2024
Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Anton Faustmann, Patrick Liebisch, Benjamin Bennemann +6
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As…
physics.app-ph2021★ 21 cited
On the Performance of Dual-Gate Reconfigurable Nanowire Transistors
Bin Sun, Benjamin Richstein, Patrick Liebisch +5
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this…