3 citations · 3 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2022★ 3 cited
Ultra-Wide Bandgap GaO-on-SiC MOSFETs
Yiwen Song, Arkka Bhattacharyya, Anwarul Karim +8
Ulta-wide bandgap semiconductors based on -GaO offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's w…
physics.app-ph2021
130 mA/mm -GaO MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts
Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +5
We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown -GaO metal-semiconductor field effect transistor…