J. Lundh

collaborators

2 papers

cond-mat.mtrl-sci2024

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun +12

This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor dep…

physics.app-ph2021

130 mA/mm $β$ -Ga $_{2}$ O $_{3}$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +5

We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ metal-semiconductor field effect transistor…

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

130 mA/mm β-Ga2​O3​ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts

130 mA/mm $β$ -Ga $_{2}$ O $_{3}$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts