106 citations · 172 across the 9 of their papers we have counts for
9 papers
Coherent Spin-Photon Interface of single PL6 Color Centers in Silicon Carbide
Zhen-Xuan He, Gergő Thiering, Rui-Jian Liang +10
The PL6 color center in silicon carbide has recently emerged as a promising platform for quantum information processing, yet its coherent spin--photon interface has remained largel…
Decoherence-protected entangling gates in a silicon carbide quantum node
Shuo Ren, Rui-Jian Liang, Zhen-Xuan He +8
Solid-state color centers are promising candidates for nodes in quantum network architectures. However, realizing scalable and fully functional quantum nodes, comprising both proce…
High-yield engineering and identification of oxygen-related modified divacancies in 4H-SiC
Qi-Cheng Hu, Ji-Yang Zhou, Shuo Ren +9
Modified divacancies in the 4H polytype of silicon carbide (SiC) exhibit enhanced charge stability and spin addressability at room temperature, making them attractive for quantum a…
Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation
Zhen-Xuan He, Ji-Yang Zhou, Wu-Xi Lin +13
Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during opti…
Plasmonic-enhanced bright single spin defects in silicon carbide membranes
Ji-Yang Zhou, Qiang Li, Zhi-He Hao +10
Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly…
Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
Zhen-Xuan He, Qiang Li, Xiao-Lei Wen +6
Precise generation of spin defects in solid-state systems is essential for nanostructure fluorescence enhancement. We investigated a method for creating single silicon vacancy defe…
Magnetic detection under high pressures using designed silicon vacancy centers in silicon carbide
Jun-Feng Wang, Lin Liu, Xiao-Di Liu +18
Pressure-induced magnetic phase transition is attracting interest due to its ability to detect superconducting behaviour at high pressures in diamond anvil cells. However, detectio…
Temperature dependence of divacancy spin coherence in implanted silicon carbide
Wu-Xi Lin, Fei-Fei Yan, Qiang Li +8
Spin defects in silicon carbide (SiC) have attracted increasing interest due to their excellent optical and spin properties, which are useful in quantum information processing. In…
Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
Qiang Li, Jun-Feng Wang, Fei-Fei Yan +16
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperatu…