10 citations · 10 across the 1 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026
Interface Doping Mechanism of p-Type Conductivity in Mist-CVD-Grown LiGa5O8 Thin Films
Dong Su Yu, Shashu Tomar, Zixiu Huang +7
LiGa5O8 is an ultrawide-bandgap oxide semiconductor that has recently been experimentally demonstrated to exhibit p-type conductivity; however, the origin of the observed p-type tr…
physics.app-ph2021★ 10 cited
Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN
Yuxuan Zhang, Zhaoying Chen, Kaitian Zhang +2
Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is…