329 citations · 423 across the 22 of their papers we have counts for
3 papers · 1 filter
Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas
Mete M. Bayrak, Anthony J. Ardizzi, Sadhvikas Addamane +2
The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer…
Inducing a Tunable Skyrmion-Antiskyrmion System through Ion Beam Modification of FeGe Films
M. B. Venuti, Xiyue S. Zhang, Eric J Lang +8
Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic non-centrosymmetric materials and mul…
Exploring Layer Thinning of Exfoliated \b{eta}-Tellurene and Room Temperature Photoluminescence with Large Exciton Binding Energy Revealed in TeO2
Ghadeer Aljalham, Sarah Alsaggaf, Shahad Albawardi +3
Due to its tunable band gap, anisotropic behavior, and superior thermoelectric properties, device applications using layered tellurene (Te) are becoming attractive. Here, we report…