collaborators

1 paper

cond-mat.mtrl-sci2021

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Massimo Zimbone, Nicolo Piluso, Grazia Litrico +6

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the…