2 papers
cond-mat.mtrl-sci2021
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
Massimo Zimbone, Nicolo Piluso, Grazia Litrico +6
Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the…
cond-mat.mtrl-sci2021
Thermal Annealing of High Dose P Implantation in 4H-SiC
Cristiano Calabretta, Massimo Zimbone, Eric G. Barbagiovanni +7
In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminesce…