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cond-mat.mes-hall2023
Allotropic GaSe/GaSe nanostructures grown by van der Waals epitaxy: Narrow exciton lines and single-photon emission
Maxim Rakhlin, Sergey Sorokin, Aidar Galimov +5
The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenid…
cond-mat.mes-hall2023
Indirect-to-direct bandgap transition in few-layer -InSe as probed by photoluminescence spectroscopy
Bogdan R. Borodin, Ilya A. Eliseyev, Aidar I. Galimov +4
InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure,…