22 citations · 35 across the 4 of their papers we have counts for
4 papers
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation
R. Fontanini, M. Segatto, K. S. Nair +7
In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF…
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures
Mattia Segatto, Riccardo Fontanini, Francesco Driussi +2
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the developm…
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies
David Esseni, Riccardo Fontanini, Daniel Lizzit +3
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and m…
Modelling and design of FTJs as high reading-impedance synaptic devices
Riccardo Fontanini, Marco Massarotto, Ruben Specogna +3
We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a mode…