53 citations · 102 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2023★ 53 cited
Zn-doped P-type InAs Nanocrystal Quantum Dots
Lior Asor, Jing Liu, Shuting Xiang +3
Doped heavy metal-free III-V semiconductor nanocrystal quantum dots are of great interest both from the fundamental aspects of doping in highly confined structures, and from the ap…
cond-mat.mes-hall2021★ 15 cited
Surface versus Impurity Doping Contributions in InAs Nanocrystals Field Effect Transistor Performance
Durgesh C. Tripathi, Lior Asor, Gil Zaharoni +2
The electrical functionality of an array of semiconductor nanocrystals depends critically on the free carriers that may arise from impurity or surface doping. Herein, we used InAs…
cond-mat.mtrl-sci2021★ 34 cited
InAs nanocrystals with robust p-type doping
Lior Asor, Jing Liu, Yonatan Ossia +4
Robust control over the carrier type is fundamental for the fabrication of nanocrystal-based optoelectronic devices, such as the p-n homojunction, but effective incorporation of im…