14 citations · 16 across the 4 of their papers we have counts for
4 papers
Investigation of Cryogenic Current-Voltage Anomalies in SiGe HBTs: Role of Base-Emitter Junction Inhomogeneities
Nachiket R. Naik, Bekari Gabritchidze, Justin H. Chen +3
The deviations of cryogenic collector current-voltage characteristics of SiGe heterojunction bipolar transistors (HBTs) from ideal drift-diffusion theory have been a topic of inves…
Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise
Bekari Gabritchidze, Kieran A. Cleary, Anthony C. Readhead +1
We report the on-wafer characterization of -parameters and microwave noise temperature () of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 4…
Self-heating of cryogenic high-electron-mobility transistor amplifiers and the limits of microwave noise performance
Anthony J. Ardizzi, Alexander Y. Choi, Bekari Gabritchidze +4
The fundamental limits of the microwave noise performance of high electron mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy…
Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry
Alexander Y. Choi, Iretomiwa Esho, Bekari Gabritchidze +2
Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum c…