2 papers
cond-mat.mtrl-sci2022
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure
Ru Xu, Peng Chen, Jing Zhou +9
In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a do…
physics.optics2021
All-Fibre Label-Free Nano-Sensor for Real-Time in situ Early Monitoring of Cellular Apoptosis
Danran Li, Nina Wang, Tianyang Zhang +10
The achievement of all-fibre functional nano-modules for subcellular label-free measurement has long been pursued due to the limitations of manufacturing techniques. In this paper,…